NTGS3441, NVGS3441
Power MOSFET
1 Amp, 20 Volts, P ? Channel TSOP ? 6
Features
?
?
?
?
?
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP ? 6 Surface Mount Package
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC ? Q101 Qualified and
PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
1 AMPERE
20 VOLTS
R DS(on) = 90 m W
P ? Channel
Applications
? Power Management in Portable and Battery ? Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
3
1 2 5 6
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
V DSS
? 20
V
4
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 m S)
Thermal Resistance
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 m S)
V GS
R q JA
P d
I D
I DM
R q JA
P d
I D
I DM
" 8.0
244
0.5
? 1.65
? 10
128
1.0
? 2.35
? 14
V
° C/W
W
A
A
° C/W
W
A
A
1
TSOP ? 6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
6 5 4
PT M G
G
1 2 3
Thermal Resistance
Junction ? to ? Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 m S)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
R q JA
P d
I D
I DM
T J , T stg
T L
62.5
2.0
? 3.3
? 20
? 55 to 150
260
° C/W
W
A
A
° C
° C
Drain Drain Gate
PT = Specific Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR ? 4 or G ? 10 PCB, operating to steady state.
2. Mounted onto a 2 ″ square FR ? 4 board (1 in sq, 2 oz. Cu. 0.06 ″ thick single
sided), operating to steady state.
3. Mounted onto a 2 ″ square FR ? 4 board (1 in sq, 2 oz. Cu. 0.06 ″ thick single
sided), t t 5.0 seconds.
ORDERING INFORMATION
Device Package Shipping ?
NTGS3441T1G TSOP ? 6 3000 / Tape & Reel
(Pb ? Free)
NVGS3441T1G
TSOP ? 6
3000 / Tape& Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
October, 2012 ? Rev. 6
1
Publication Order Number:
NTGS3441T1/D
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相关代理商/技术参数
NTGS3441T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 1 Amp, 20 Volts
NTGS3441T1_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 1 Amp, 20 VoltsP−Channel TSOP−6
NTGS3441T1G 功能描述:MOSFET 20V 1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3443 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 4.4 Amps, 20 Volts
NTGS3443B 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6
NTGS3443BT1G 功能描述:MOSFET -20V -4.2A SGL P-CHN TSOP-6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3443T1 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3443T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 2 Amps, 20 Volts